中国农业气象 ›› 2016, Vol. 37 ›› Issue (02): 199-205.

• 论文 • 上一篇    下一篇

土垄内嵌基质栽培方式对日光温室春甜椒的降温增产效应

傅国海,刘文科   

  1. 中国农业科学院农业环境与可持续发展研究所/农业部设施农业节能与废弃物处理重点实验室,北京 100081
  • 出版日期:2016-04-20 发布日期:2016-04-18
  • 作者简介:傅国海(1991-),硕士生,主要从事设施作物根系环境研究。E-mail:haifengzhisheng@126.com
  • 基金资助:

    国家高技术研究发展计划(863计划)课题(2013AA103001);国家自然科学基金项目(31201661)

Effects on Cooling down and Increasing Yield of Sweet Pepper of A Novel Cultivation Method: Soil Ridge Substrate-Embedded in Chinese Solar Greenhouse

FU Guo-hai, LIU Wen-ke   

  1. Institute of Environment and Sustainable Development in Agriculture, Chinese Academy of Agricultural Sciences/Key Labatory of Energy Conservation and Waste Management of Agricultural Structures, Ministry of Agriculture, Beijing 100081, China
  • Online:2016-04-20 Published:2016-04-18

摘要:

本文提出土垄内嵌基质的栽培方式以缓解日光温室春甜椒生长季遭受的高温影响。通过设置土垄栽培(S处理)、土垄嵌PE槽基质栽培(P处理)、土垄嵌铁丝网槽基质栽培(W处理)3种处理,以单纯PE槽基质栽培(CK)为对照,在春甜椒果实成熟采摘期(5-6月)每日气温较高时段(12:00-16:00)观测各处理根区环境温度,在甜椒不同生育时期观测各处理植株的生长指标及产量并进行比较。结果表明:S、P和W处理的根区温度分别比CK低1.50、2.17和1.47℃,说明P和W处理能够有效缓冲高温时甜椒根区环境温度的升高,且P处理的温度缓冲效果略优于W处理。S、P和W处理甜椒的株高、茎粗、叶绿素含量和地上干鲜重均显著高于CK,能显著促进甜椒生长发育,其中W处理对甜椒生长的促进作用最明显。基质栽培根系鲜重较大,但CK根区高温减少了甜椒地上部和根系干物质积累。此外,第一次采摘时土垄栽培的结实数显著低于其它3个处理,说明基质栽培相对土壤栽培能促进甜椒开花坐果,缩短生育期。W处理结实数、单果重、单株产量、果实大小及单产均显著高于其它处理,其产量为3.78kg·m-2,分别比S、P和CK处理提高80.9%、31.3%和51.8%。总之,土垄嵌铁丝网槽基质栽培能够在有效增强根区温度缓冲能力的前提下,明显提高甜椒产量,在日光温室高温环境生产中具有重要的应用价值。

关键词: 日光温室, 土垄内嵌基质栽培方式, 甜椒, 根区温度, 温度缓冲能力

Abstract:

In Chinese solar greenhouse, in order to deal with the problem of high temperature stress in sweet pepper growth period in spring, a novel cultivation method named soil ridge substrate-embedded cultivation (SRSC) was designed. In this experiment, four kinds of treatments were set such as soil ridge (S treatment), soil ridge substrate-embedded of PE (P treatment), soil ridge substrate-embedded of wire (W treatment) and single PE groove (CK) which as contrast. Root zone temperatures were observed from 12:00 to 16:00 every day in sweet pepper maturation stage (May to June), and parameters of growth and yield of sweet pepper were measured and analysed at different times. Results showed that root zone temperatures of S, P and W were 1.50, 2.17 and 1.47℃ lower than CK, respectively, and P and W could effectively buffer high root zone temperature, and the effect of P was slightly better than W. The plant height, stem diameter, chlorophyll content, dry shoot weight and fresh shoot weight of sweet pepper cultivated on S, P and W were significantly higher than that of CK, and the effect of W was the most obvious. The fresh root weight of soilless cultivation was significantly less than sweet pepper cultivated on other ridges, but dry shoot and root weight were decreased by high root zone temperature. In addition, the fruit number of S was significantly less than that of other three treatments when picking at first time, it suggested that soilless cultivation could accelerate the growth process of sweet pepper. The yield of W was 3.78kg·m-2, and it increased by 80.9%, 31.3%, and 51.8% respectively than S, P and CK. In short, W enhanced the root zone temperature buffer capacity, and significantly improved the yield of sweet pepper, and it had important application value in the high temperature environment production in Chinese solar greenhouse.

Key words: Chinese solar greenhouse, Soil ridge substrate-embedded cultivation method, Sweet pepper, Root zone temperature, Temperature buffer capacity